Memory arrays, and methods of forming memory arrays

ABSTRACT

Some embodiments include a memory array which has a vertical stack of alternating insulative levels and wordline levels. The wordline levels have terminal ends corresponding to control gate regions. Charge-trapping material is along the control gate regions of the wordline levels and not along the insulative levels. The charge-trapping material is spaced from the control gate regions by charge-blocking material. Channel material extends vertically along the stack and is laterally spaced from the charge-trapping material by dielectric material. Some embodiments include methods of forming NAND memory arrays.

TECHNICAL FIELD

Memory arrays, and methods of forming memory arrays.

BACKGROUND

Memory provides data storage for electronic systems. Flash memory is onetype of memory, and has numerous uses in modern computers and devices.For instance, modern personal computers may have BIOS stored on a flashmemory chip. As another example, it is becoming increasingly common forcomputers and other devices to utilize flash memory in solid statedrives to replace conventional hard drives. As yet another example,flash memory is popular in wireless electronic devices because itenables manufacturers to support new communication protocols as theybecome standardized, and to provide the ability to remotely upgrade thedevices for enhanced features.

NAND may be a basic architecture of integrated flash memory. A NAND cellunit comprises at least one selecting device coupled in series to aserial combination of memory cells (with the serial combination commonlybeing referred to as a NAND string). NAND architecture may be configuredin a three-dimensional arrangement comprising vertically-stacked memorycells. It is desired to develop improved NAND architecture.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagrammatic cross-sectional side view of an exampleintegrated structure having a region of an example NAND memory array.

FIG. 2 is a diagrammatic cross-sectional side view of another exampleintegrated structure having a region of another example NAND memoryarray.

FIGS. 3-10 are diagrammatic cross-sectional side views of an exampleintegrated structure at process stages of an example method.

FIGS. 11-14 are diagrammatic cross-sectional side views of an exampleintegrated structure at process stages of an example method. The processstage of FIG. 11 may follow that of FIG. 9.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

Operation of NAND memory cells may comprise movement of charge between achannel material and a charge-trapping material. For instance,programming of a NAND memory cell may comprise moving charge (i.e.,electrons) from the channel material into the charge-trapping material,and then storing the charge within the charge-trapping material. Erasingof the NAND memory cell may comprise moving holes into thecharge-trapping material to recombine with electrons stored in thecharge-trapping material, and thereby release charge from thecharge-trapping material. The charge-trapping material may comprise, forexample, silicon nitride, silicon oxynitride, ruthenium oxide, etc. Aproblem with conventional NAND can be that charge-trapping materialextends across multiple memory cells of a memory array, and can enablecharge migration between the cells. The charge migration between memorycells may lead to data retention problems. Some embodiments includestructures which impede migration of charge between memory cells. Inexample embodiments, the structures utilized to impede charge migrationmay be breaks in the charge-trapping material in regions between memorycells. Although examples described herein pertain to NAND memory, it isto be understood that structures and methods described herein maypertain to other memory and architectures in other embodiments. Exampleembodiments are described with reference to FIGS. 1-14.

Referring to FIG. 1, a portion of an integrated structure 10 isillustrated, with such portion including a fragment of athree-dimensional NAND memory array 12.

The integrated structure 10 comprises a stack 15 of alternating firstand second levels 18 and 20. The levels 18 are insulative (i.e.dielectric), and the levels 20 are conductive.

The insulative levels 18 comprise insulative material 26. Suchinsulative material may comprise any suitable composition or combinationof compositions; and may, for example, comprise silicon dioxide.

The conductive levels 20 comprise conductive materials 28 and 30. Theconductive material 28 may be considered to be a conductive core, andthe conductive material 30 may be considered to be an outer conductivelayer surrounding the conductive core. The conductive materials 28 and30 may comprise different compositions than one another. In someembodiments, the conductive material 28 may comprise, consistessentially of, or consist of one or more metals (for instance,tungsten, titanium, etc.), and the conductive material 30 may comprise,consist essentially of, or consist of one or more metal-containingcompositions (for instance, metal nitride, metal silicide, metalcarbide, etc.). In some embodiments, the conductive material 30 maycomprise, consist essentially of, or consist of one or more metalnitrides (for instance, titanium nitride, tungsten nitride, etc.).

The materials 28/30 illustrate an example configuration of theconductive levels 20. In other embodiments, the conductive levels 20 maycomprise other configurations of conductive material; and may, forexample, comprise a single conductive material or more than theillustrated two conductive materials. Generally, the conductive levels20 may comprise conductive material having any suitable composition orcombination of compositions; and may comprise, for example, one or moreof various metals (for example, tungsten, titanium, etc.),metal-containing compositions (for example, metal nitride, metalcarbide, metal silicide, etc.), and conductively-doped semiconductormaterials (for example, conductively-doped silicon, conductively-dopedgermanium, etc.).

Insulative material 32 forms an insulative liner surrounding the outerconductive layer of material 30. The insulative material 32 may comprisehigh-k material (for instance, one or more of aluminum oxide, hafniumoxide, zirconium oxide, tantalum oxide, etc.); where the term “high-k”means a dielectric constant greater than that of silicon dioxide.Although the insulative material 32 is shown to be a single homogenousmaterial, in other embodiments the insulative material may comprise twoor more discrete compositions. For instance, in some embodiments theinsulative material 32 may comprise a laminate of silicon dioxide andone or more high-k materials.

In some embodiments, the conductive levels 20 may be considered to bewordline levels of a NAND memory array. Terminal ends 34 of the wordlinelevels 20 may function as control gate regions 35 of NAND memory cells36, with approximate locations of the memory cells 36 being indicatedwith brackets in FIG. 1.

The conductive levels 20 and insulative levels 18 may be of any suitablevertical thicknesses. In some embodiments, the conductive levels 20 andthe insulative levels 18 may have vertical thicknesses within a range offrom about 10 nanometers (nm) to about 300 nm. In some embodiments, theconductive levels 20 may have about the same vertical thicknesses as theinsulative levels 18. In other embodiments, the conductive levels 20 mayhave substantially different vertical thicknesses than the insulativelevels 18.

The vertically-stacked memory cells 36 form a vertical string (such as,for example, a vertical NAND string of memory cells), with the number ofmemory cells in each string being determined by the number of conductivelevels 20. The stack may comprise any suitable number of conductivelevels. For instance, the stack may have 8 conductive levels, 16conductive levels, 32 conductive levels, 64 conductive levels, 512conductive levels, 1028 conductive levels, etc.

The insulative materials 26 and 32 may be considered to form sidewalls38 of an opening 40 extending through stack 15. The opening 40 may havea continuous shape when viewed from above; and may be, for example,circular, elliptical, etc. Accordingly, the sidewalls 38 of FIG. 1 maybe comprised by a continuous sidewall that extends around the peripheryof opening 40.

The insulative material 32 may be considered to be a charge-blockingmaterial, with regions of such charge-blocking material 32 extendingalong the terminal ends 34 of wordline levels 20. A charge-blockingmaterial may have the following functions in a memory cell: in a programmode, the charge-blocking material may prevent charge carriers frompassing out of the charge-storage material (e.g., floating-gatematerial, charge-trapping material, etc.) toward the control gate; andin an erase mode, the charge-blocking material may prevent chargecarriers from flowing into the charge-storage material from the controlgate.

Charge-trapping material 44 extends along the terminal ends 34 (i.e.,control gate regions 35) of wordline levels 20, and is spaced from thecontrol gate regions by the charge-blocking material 32. Thecharge-trapping material 44 may comprise any suitable composition orcombination of compositions; and in some embodiments, may comprise oneor more of silicon nitride, silicon oxynitride, ruthenium oxide, etc. Insome example embodiments, the charge-trapping material 44 may comprise,consist essentially of, or consist of material comprising silicon andnitrogen. In some aspects, a “charge trap” refers to an energy well thatcan reversibly capture a charge carrier (e.g., an electron or hole).

The charge-trapping material 44 is provided in segments 43 which arearranged one atop another (i.e., are vertically stacked), and which arevertically spaced from one another by gaps 45. Each of the segments 43of the charge-trapping material 44 is adjacent a wordline level 20, andeach of the gaps 45 is adjacent one of the insulative levels 18. In theshown embodiment, the segments 43 of charge-trapping material 44 do notextend vertically beyond the wordline levels 20 (i.e., do not verticallyoverlap the insulative levels 18). In other embodiments, the segments 43of charge-trapping material 44 may extend vertically beyond theconductive levels 20 to partially overlap the insulative levels 18.

The gaps 45 may be referred to as intervening regions which block chargemigration between the segments 43 of charge-trapping material 44. Suchprevents charge from migrating between vertically-adjacent memory cells36. In contrast, conventional three-dimensional NAND memory arrays mayhave a continuous layer of charge-trapping material extending along allof the vertically-stacked memory cells of a NAND string, and such mayundesirably enable charge-migration between the memory cells of thestring and lead to data loss. The embodiment of FIG. 1 may have improveddata retention as compared to such conventional three-dimensional NANDmemory arrays.

Charge-tunneling material 46 extends vertically along thecharge-trapping material 44, and extends into the gaps 45. Thecharge-tunneling material 46 may comprise any suitable composition orcombination of compositions; and in some embodiments may comprise,consist essentially of, or consist of a bandgap-engineered structurehaving nitrogen-containing material laterally sandwiched between twooxides. The nitrogen-containing material may be, for example, siliconnitride. The two oxides may be the same composition as one another, ormay comprise different compositions relative to one another; and in someembodiments may both be silicon dioxide. The charge-tunneling material46 may be considered to comprise gate-dielectric material in someembodiments. The charge-tunneling material 46 may comprise, consistessentially of, or consist of silicon dioxide in some embodiments. Inoperation, charge may tunnel through the charge-tunneling material 46 ascharge is transferred between the charge-trapping material 44 andchannel material (material 48, which is described below) of the memorycells 36 during programming operations, erasing operations, etc. In someembodiments, the charge-tunneling material 46 may be referred to simplyas an insulative material or as a dielectric material.

The charge-tunneling material 46 is referred to as “extendingvertically” to indicate that it generally extends through the stack 15.The vertically-extending material 46 (and other materials describedherein as extending vertically) may extend substantially orthogonallyrelative to upper surfaces of the levels 18 and 20 (as shown), or not;depending on, for example, whether opening 40 has sidewalls which aresubstantially orthogonal to the upper surfaces of the levels 18 and 20,or not.

In the illustrated embodiment, the charge-tunneling material 46 iswithin the gaps 45 between the segments 43 of charge-trapping material44. In some embodiments, the charge-trapping material 44 may beconsidered to be configured as a linear arrangement which extendsvertically along the stack 15; with such linear arrangement comprisingthe segments 43 of charge-trapping material 44 alternating with segments47 of charge-tunneling material 46. The charge-tunneling material 46within gaps 45 may be referred to as spacing material between thesegments 43. Although the charge-tunneling material 46 is shown havingregions which extend into the gaps 45 to form the segments 47 (i.e., toform the spacing material between segments 43), in other embodimentsother insulative material may be within the gaps 45 and utilized as thespacing material between the segments 43. In such embodiments, thecharge-tunneling material 46 may extend along such other insulativematerial, rather than extending into the gaps 45.

Channel material 48 extends vertically along the charge-tunnelingmaterial 46 (and, in some embodiments may be considered to extendvertically along the stack 15). The charge-tunneling material 46 islaterally between the channel material 48 and the charge-trappingmaterial 44. The channel material 48 may comprise any suitablecomposition or combination of compositions; and in some embodiments maycomprise, consist essentially of, or consist of appropriately-dopedsilicon.

In the illustrated embodiment, an insulative region 50 extends along amiddle of opening 40. The insulative region 50 may comprise any suitableinsulative composition; including, for example, silicon dioxide, siliconnitride, etc. Alternatively, at least a portion of the insulative region50 may be a void. The illustrated embodiment having the insulativeregion 50 extending down the middle of opening 40 is a so-calledhollow-channel configuration. In other embodiments, the channel material48 may entirely fill the central region of opening 40 to form avertically-extending pedestal within such central region.

The stack 15 is supported by a base 52. A break is provided between thebase 52 and the stack 15 to indicate that there may be additionalmaterials and/or integrated circuit structures between the base 52 andthe stack 15. In some applications, such additional integrated materialsmay include, for example, source-side select gate material (SGSmaterial).

The base 52 may comprise semiconductor material; and may, for example,comprise, consist essentially of, or consist of monocrystalline silicon.The base 52 may be referred to as a semiconductor substrate. The term“semiconductor substrate” means any construction comprisingsemiconductive material, including, but not limited to, bulksemiconductive materials such as a semiconductive wafer (either alone orin assemblies comprising other materials), and semiconductive materiallayers (either alone or in assemblies comprising other materials). Theterm “substrate” refers to any supporting structure, including, but notlimited to, the semiconductor substrates described above. In someapplications, the base 52 may correspond to a semiconductor substratecontaining one or more materials associated with integrated circuitfabrication. Such materials may include, for example, one or more ofrefractory metal materials, barrier materials, diffusion materials,insulator materials, etc.

FIG. 2 shows a construction 10 a having a NAND memory array 12 aillustrating another example configuration. The configuration of FIG. 2is similar to that of FIG. 1, except that the insulative material 32(i.e., the charge-blocking material) is only along terminal regions 53of the wordline levels 20. Accordingly, each of the wordline levels 20has a first region 51 (i.e., a non-terminal region) laterally adjacent asecond region 53 (i.e., a terminal region), with the first regions 51being vertically thicker than the second regions 53.

The insulative material 32 extends along a top and a bottom of each ofthe terminal regions 53 of the wordline levels 20, but is not alongeither the top or the bottom of each of the non-terminal regions 51 ofthe wordline levels 20. In the illustrated embodiment, the non-terminalregions 51 of the wordline levels 20 have vertical thicknesses T₁, andthe terminal regions 53 of the wordline levels 20 have verticalthicknesses T₂. The vertical thickness T₂ is less than the verticalthickness T₁ by about double a thickness of the insulative material 32.The insulative material 32 may have any suitable thickness, and in someembodiments may have a thickness within a range of from about 5 nm toabout 50 nm; and accordingly, in some embodiments the vertical thicknessT₂ may less than the vertical thickness T₁ by a dimension within a rangeof from about 10 nm to about 100 nm. The embodiment of FIG. 2 may beadvantageous relative to that of FIG. 1 in some applications, as thethick non-terminal regions 51 of the wordline levels 20 may enable thewordline levels to have lower resistance. Alternatively, the embodimentof FIG. 1 may be advantageous relative to that of FIG. 2 in someapplications, as the embodiment of FIG. 1 may be fabricated with fewerprocess steps than that of FIG. 2.

The three-dimensional NAND configurations of FIGS. 1 and 2 may befabricated utilizing any suitable methodology. Example methodology isdescribed with reference to FIGS. 3-14. A first example embodimentmethod is described with reference to FIGS. 3-10.

Referring to FIG. 3, a construction 10 b is formed to include a verticalstack 60 of alternating first levels 62 and second levels 64 over thebase 52. The first levels 62 comprise first material 66, and the secondlevels 64 comprise second material 68. The first and second materials 66and 68 may comprise any suitable compositions or combinations ofcompositions. In subsequent processing (described below with referenceto FIG. 6) charge-trapping material 44 is selectively formed along thesecond material 68 relative to the first material 66. In someembodiments, the first material 66 comprises silicon dioxide, andaccordingly may comprise the same material 26 as the insulative levels18 of FIGS. 1 and 2; and the second material 68 comprises semiconductormaterial (for instance, silicon, germanium, etc.). In some exampleembodiments, the first material 66 comprises, consists essentially of,or consists of silicon dioxide; and the second material 68 comprises,consists essentially of, or consists of silicon (for instance,polycrystalline silicon, amorphous silicon, monocrystalline silicon,etc.).

Referring to FIG. 4, the opening 40 is formed to extend through stack60. The opening 40 may be formed utilizing any suitable methodology. Forinstance, a patterned mask (not shown) may be formed over the stack 60to define a location of the opening 40, and then the opening 40 may beformed to extend through the stack 60 with one or more suitable etches.Subsequently, the patterned mask may be removed.

The opening 40 has sidewalls 65 extending along the first and secondmaterials 66 and 68. The first levels 62 have first surfaces 67 exposedalong the sidewalls 65, and the second levels 64 have second surfaces 69exposed along the sidewalls 65.

Referring to FIG. 5, treatment material “X” is flowed into opening 40.The treatment material “X” forms altered regions 70 (indicateddiagrammatically with dashed lines) along the exposed surfaces 69 of thesecond material 68 of the second levels 64. In some embodiments, thesecond material 68 comprises silicon, and the treatment material “X”comprises one or more of the hydrogen, ammonia and fluorine. In suchembodiments, the altered regions 70 may be regions in which native oxideis disrupted along surfaces 69, or entirely removed from the surfaces69.

Referring to FIG. 6, charge-trapping material 44 is selectively formedalong the treated surfaces 69 relative to the surfaces 67. Thecharge-trapping material 44 may comprise any suitable composition, andin some embodiments may comprise one or more of silicon nitride, siliconoxynitride and ruthenium oxide. In an example embodiment, thecharge-trapping material comprises, consists essentially of, or consistsof silicon nitride, and is selectively formed on treated surfaces 69relative to surfaces 67 utilizing atomic layer deposition (ALD), and/orchemical vapor deposition (CVD), and/or any other suitable methods. Suchmethods may take advantage of different nucleation rates along treatedsurfaces 69 relative to surfaces 67, and/or may take advantage of otherdifferences in physical properties of treated surfaces 69 relative tosurfaces 67. In some embodiments, at least some of the silicon nitrideof charge-trapping material 44 may be formed by reactingnitrogen-containing precursor (i.e., nitrogen, or a nitrogen-containingcompound, such as, for example, ammonia) with silicon atoms of surface69 at an appropriate temperature (for instance, a temperature in excessof about 900° C.). The charge-trapping material 44 may be formed to anysuitable thickness, such as, for example, a thickness within a range offrom about 5 nm to about 10 nm.

The embodiment of FIGS. 5 and 6 activates surfaces of material 68 toinduce selective formation of charge-trapping material 44 onto surfacesof material 68 relative to surfaces of material 66. Alternative oradditional processing may include deactivation of surfaces of material66. For instance, a barrier may be formed along surfaces of material 66(for instance, by one or more of deposition of barrier material alongsurfaces 66, by chemical modification of the surfaces of material 66, byphysical modification of the surfaces of material 66, etc.) to impede orpreclude formation of charge-trapping material 44 along the surfaces ofmaterial 66.

The charge-trapping material 44 forms the vertically-spaced segments 43.Gaps 45 are along regions of material 66 between such vertically-spacedsegments.

Referring to FIG. 7, charge-tunneling material 46 is formed to extendvertically along the first and second levels 62/64. The charge-tunnelingmaterial is along the charge-trapping material 44 (and is spaced fromthe material 68 of the second levels 64 by the charge-trapping material44), and extends into the gaps 45.

Channel material 48 is formed to extend vertically along thecharge-tunneling material 46.

Insulative material 74 is formed within a remaining central region ofopening 40. The insulative material 74 forms the insulative region 50described above with reference to FIG. 1; and may comprise any suitablecomposition or combination of compositions (such as, for example,silicon nitride, silicon dioxide, etc.). In some embodiments, theinsulative material 74 may be omitted and a void may be left within thecentral region of opening 40. Alternatively, channel material 48 may beformed to entirely fill the opening 40.

Referring to FIG. 8, the second material 68 (FIG. 7) is removed to leavevoids 80. Such removal may be accomplished with any suitable etch whichis selective for the second material 68 relative to the materials 44 and66. For instance, if the second material 68 comprises polysilicon andthe materials 44 and 66 comprise silicon nitride and silicon dioxide,respectively, the etch may utilize tetramethylammonium hydroxide (TMAH).In a processing step which is not shown, slits may be formed throughstack 60 (FIG. 7) to provide access to the first and second levels 62/64(FIG. 7). Etchant may be flowed into such slits to access the secondmaterial 68 (FIG. 7).

Referring to FIG. 9, insulative material 32 is formed within voids 80 toline the voids, and thereby become an insulative liner within the voids.The insulative material 32 may comprise high-k material (for instance,one or more of aluminum oxide, hafnium oxide, zirconium oxide, tantalumoxide, etc.) as discussed above with reference to FIG. 1, and may bereferred to as a charge-blocking material.

Referring to FIG. 10, conductive material 30 is formed within the linedvoids 80 (FIG. 9), and then conductive material 28 is formed within thelined voids 80 (FIG. 9). The conductive material 28 may be considered tobe a conductive core (as discussed above with reference to FIG. 1), andthe conductive material 30 may be considered to be an outer conductivelayer surrounding the conductive core (as is also discussed above withreference to FIG. 1).

The construction 10 b of FIG. 10 comprises a NAND memory array 12 banalogous to the NAND memory array 12 discussed above with reference toFIG. 1. The first material 66 may be the same as material 26 (e.g., maycomprise silicon dioxide or other suitable insulative material) in someembodiments. Alternatively, the first material 66 may be removed andreplaced with material 26 in some embodiments.

The insulative material 32 is shown extending along edges of insulativelevels 18 in the shown embodiment of FIGS. 9 and 10, as may occur if theillustrated edges of insulative levels 18 are along a slit through whichthe insulative material 32 is deposited.

A second example embodiment method of fabricating a NAND memory array isdescribed with reference to FIGS. 11-14.

Referring to FIG. 11, a construction 10 c is shown at a processing stagefollowing that of FIG. 9. The construction 10 c is shown after the voids80 (FIG. 9) are lined with insulative material 32. Subsequently,sacrificial material 82 is formed within the lined voids. Thesacrificial material 80 may comprise any suitable composition orcombination of compositions, such as, for example, silicon, germanium,etc.

Referring to FIG. 12, the materials 82 and 32 are recessed to formcavities 84. After the materials 82 and 32 are recessed, regions thathad been in voids 80 may be considered to comprise first segments 85 andsecond segments 87 (labeled relative to regions in only one of the voids80 in order to simplify the drawing). The first segments 85 are notlined with material 32, and the second segments 87 remain lined with theinsulative material 32.

Referring to FIG. 13, remaining portions of sacrificial material 82 areremoved.

Referring to FIG. 14, the conductive levels 20 are formed, and in theshown embodiment the conductive levels 20 comprise the materials 28 and30. The conductive levels 20 have the non-terminal regions 51 within thefirst segments 85, and have the terminal regions 53 within the secondsegments 87. The non-terminal regions 51 have the vertical thicknessesT₁, and the terminal regions 53 have the vertical thicknesses T₂,analogous to the embodiment described above with reference to FIG. 2.Accordingly, the construction 10 c of FIG. 14 comprises a NAND memoryarray 12 b analogous to the NAND memory array 12 b discussed above withreference to FIG. 2. The first material 66 may be the same as material26 (e.g., may comprise silicon dioxide or other suitable insulativematerial) in some embodiments. Alternatively, the first material 66 maybe removed and replaced with material 26 in some embodiments.

The structures and arrays described above may be incorporated intoelectronic systems. Such electronic systems may be used in, for example,memory modules, device drivers, power modules, communication modems,processor modules, and application-specific modules, and may includemultilayer, multichip modules. The electronic systems may be any of abroad range of systems, such as, for example, cameras, wireless devices,displays, chip sets, set top boxes, games, lighting, vehicles, clocks,televisions, cell phones, personal computers, automobiles, industrialcontrol systems, aircraft, etc.

Unless specified otherwise, the various materials, substances,compositions, etc. described herein may be formed with any suitablemethodologies, either now known or yet to be developed, including, forexample, atomic layer deposition (ALD), chemical vapor deposition (CVD),physical vapor deposition (PVD), etc.

Both of the terms “dielectric” and “electrically insulative” may beutilized to describe materials having insulative electrical properties.The terms are considered synonymous in this disclosure. The utilizationof the term “dielectric” in some instances, and the term “electricallyinsulative” in other instances, may be to provide language variationwithin this disclosure to simplify antecedent basis within the claimsthat follow, and is not utilized to indicate any significant chemical orelectrical differences.

The particular orientation of the various embodiments in the drawings isfor illustrative purposes only, and the embodiments may be rotatedrelative to the shown orientations in some applications. The descriptionprovided herein, and the claims that follow, pertain to any structuresthat have the described relationships between various features,regardless of whether the structures are in the particular orientationof the drawings, or are rotated relative to such orientation.

The cross-sectional views of the accompanying illustrations only showfeatures within the planes of the cross-sections, and do not showmaterials behind the planes of the cross-sections in order to simplifythe drawings.

When a structure is referred to above as being “on” or “against” anotherstructure, it can be directly on the other structure or interveningstructures may also be present. In contrast, when a structure isreferred to as being “directly on” or “directly against” anotherstructure, there are no intervening structures present.

Structures (e.g., layers, materials, etc.) may be referred to as“extending vertically” to indicate that the structures generally extendupwardly from an underlying base (e.g., substrate). Thevertically-extending structures may extend substantially orthogonallyrelative to an upper surface of the base, or not.

Some embodiments include a memory array which includes a vertical stackof alternating insulative levels and wordline levels. The wordlinelevels have terminal ends corresponding to control gate regions.Charge-trapping material is along the control gate regions of thewordline levels and not along the insulative levels. The charge-trappingmaterial is spaced from the control gate regions by charge-blockingmaterial. Channel material extends vertically along the stack and islaterally spaced from the charge-trapping material by dielectricmaterial.

Some embodiments include a memory array comprising a vertical stack ofalternating insulative levels and wordline levels. The wordline levelshave terminal ends corresponding to control gate regions. A lineararrangement of charge-trapping material extends vertically along thestack. The linear arrangement of the charge-trapping material comprisesvertically alternating segments of the charge-trapping material andsegments of spacing material. The segments of charge-trapping materialare along the wordline levels. Channel material extends vertically alongthe stack and is laterally spaced from the segments of thecharge-trapping material by dielectric material.

Some embodiments include a NAND memory array comprising a vertical stackof alternating insulative levels and wordline levels. The wordlinelevels have terminal ends corresponding to control gate regions.Charge-trapping material is along the control gate regions of thewordline levels, and is spaced from the control gate regions bycharge-blocking material. The charge-trapping material is configured assegments, with each of the wordline levels being adjacent one of thesegments of the charge-trapping material. The segments of thecharge-trapping material are arranged one atop another and arevertically spaced from one another by intervening gaps. The wordlinelevels have first regions and second regions laterally adjacent thefirst regions. The first regions are vertically thicker than the secondregions. The second regions comprise the terminal ends. Channel materialextends vertically along the stack and is laterally spaced from thecharge-trapping material by charge-tunneling material.

Some embodiments include a method of forming a NAND memory array. Avertical stack of alternating first and second levels is formed. Thefirst levels comprise first material, and the second levels comprisesecond material. The first and second levels have exposed surfaces alongan opening extending through the first and second levels.Charge-trapping material is selectively formed along the exposedsurfaces of the second levels relative to the exposed surfaces of thefirst levels. Charge-tunneling material is formed to extend verticallyalong the first and second levels, and is spaced from the second levelsby the charge-trapping material. Channel material is formed to extendvertically along the charge-tunneling material. The second material isremoved to leave voids. Conductive levels are formed within the voids.The conductive levels are wordline levels of the NAND memory array andhave terminal ends corresponding to control gate regions.

Some embodiments include a method of forming a NAND memory array. Avertical stack of alternating first and second levels is formed. Thefirst levels comprise silicon dioxide, and the second levels comprisesilicon. The first and second levels have exposed surfaces along anopening extending through the first and second levels. The exposedsurfaces of the second levels are treated with one or more of hydrogen,ammonia and fluorine. Charge-trapping material is selectively formedalong the treated surfaces of the second levels relative to the exposedsurfaces of the first levels. Charge-tunneling material is formed toextend vertically along the first and second levels, and is spaced fromthe second levels by the charge-trapping material. Channel material isformed to extend vertically along the charge-tunneling material. Thesilicon of the second levels is removed to leave voids. Metal-containingconductive levels are formed within the voids. The metal-containingconductive levels are wordline levels of the NAND memory array and haveterminal ends corresponding to control gate regions.

In compliance with the statute, the subject matter disclosed herein hasbeen described in language more or less specific as to structural andmethodical features. It is to be understood, however, that the claimsare not limited to the specific features shown and described, since themeans herein disclosed comprise example embodiments. The claims are thusto be afforded full scope as literally worded, and to be appropriatelyinterpreted in accordance with the doctrine of equivalents.

We claim:
 1. A memory array, comprising: a vertical stack of alternatinginsulative levels and wordline levels, the wordline levels havingterminal ends corresponding to control gate regions, the wordline levelshaving first regions and having second regions laterally adjacent thefirst regions, the second regions being more proximate the terminal endsthan the first regions; the first regions being vertically thicker thanthe second regions; the second regions comprising the terminal ends;charge-trapping material along the control gate regions of the wordlinelevels and not along the insulative levels; the charge-trapping materialbeing spaced from the control gate regions by charge-blocking material;and channel material extending vertically along the stack and beinglaterally spaced from the charge-trapping material by dielectricmaterial.
 2. The memory array of claim 1 wherein the charge-blockingmaterial comprises high-k dielectric material; wherein said high-kdielectric material is along top and bottom surfaces of the secondregions of the wordline levels, and along the terminal ends; wherein thehigh-k dielectric material is not along the first regions of thewordline levels; and wherein the first regions of the wordline levelsare thicker than the second regions of the wordline levels by aboutdouble a thickness of the high-k dielectric material.
 3. A memory array,comprising: a vertical stack of alternating insulative levels andwordline levels, the wordline levels having terminal ends correspondingto control gate regions, the wordline levels having first regions, andhaving second regions laterally adjacent the first regions, the secondregions being more proximate the terminal ends than the first regions;the first regions being vertically thicker than the second regions; thesecond regions comprising the terminal ends; a linear arrangement ofcharge-trapping material extending vertically along the stack; thelinear arrangement of the charge-trapping material comprising verticallyalternating segments of the charge-trapping material and segments ofspacing material; the segments of charge-trapping material being alongthe wordline levels; and channel material extending vertically along thestack and being laterally spaced from the segments of thecharge-trapping material by dielectric material.
 4. The memory array ofclaim 3 wherein high-k dielectric material is along top and bottomsurfaces of the second regions of the wordline levels, and along theterminal ends; wherein the high-k dielectric material is not along thefirst regions of the wordline levels; and wherein the first regions ofthe wordline levels are thicker than the second regions of the wordlinelevels by about double a thickness of the high-k dielectric material. 5.A NAND memory array, comprising: a vertical stack of alternatinginsulative levels and wordline levels, the wordline levels havingterminal ends corresponding to control gate regions; charge-trappingmaterial along the control gate regions of the wordline levels, andspaced from the control gate regions by charge-blocking material; thecharge-trapping material being configured as segments, with each of thewordline levels being adjacent one of the segments of thecharge-trapping material; the segments of the charge-trapping materialbeing arranged one atop another and being vertically spaced from oneanother by intervening gaps; the wordline levels having first regionsand second regions laterally adjacent the first regions, the secondregions being more proximate the terminal ends than the first regions;the first regions being vertically thicker than the second regions; thesecond regions comprising the terminal ends; and channel materialextending vertically along the stack and being laterally spaced from thecharge-trapping material by charge-tunneling material.
 6. The NANDmemory array of claim 5 wherein regions of the charge-tunneling materialextend into the gaps between the vertically-spaced segments of thecharge-trapping material.
 7. The NAND memory array of claim 6 whereinthe charge-tunneling material comprises nitrogen-containing materiallaterally sandwiched between two oxides.
 8. The NAND memory array ofclaim 6 wherein the charge-tunneling material comprises silicon dioxide.9. The NAND memory array of claim 5 wherein the charge-trapping materialcomprises one or more of silicon nitride, silicon oxynitride andruthenium oxide.
 10. The NAND memory array of claim 5 wherein thecharge-trapping material consists of silicon nitride.
 11. The NANDmemory array of claim 5 wherein the charge-blocking material includeshigh-k dielectric material; wherein the high-k dielectric material isalong top and bottom surfaces of the second regions of the wordlinelevels, and along the terminal ends; wherein the high-k dielectricmaterial is not along the first regions of the wordline levels; andwherein the first regions of the wordline levels are thicker than thesecond regions of the wordline levels by about double a thickness of thehigh-k dielectric material.
 12. The NAND memory array of claim 11wherein the high-k dielectric material comprises one or more of aluminumoxide, hafnium oxide, zirconium oxide and tantalum oxide.
 13. A methodof forming a NAND memory array, comprising: forming a vertical stack ofalternating first and second levels; the first levels comprising firstmaterial, and the second levels comprising second material; the firstand second levels having exposed surfaces along an opening extendingthrough the first and second levels; selectively forming charge-trappingmaterial along the exposed surfaces of the second levels relative to theexposed surfaces of the first levels; forming charge-tunneling materialextending vertically along the first and second levels, and spaced fromthe second levels by the charge-trapping material; forming channelmaterial extending vertically along the charge-tunneling material;removing the second material to leave voids; forming high-k dielectricmaterial within the voids to line the voids; recessing the high-kdielectric material within the voids so that first segments of the voidsare not lined with the high-k dielectric material while second segmentsof the voids remain lined with the high-k dielectric material; andforming conductive levels within the voids; the conductive levels beingwordline levels of the NAND memory array and having terminal endscorresponding to control gate regions, the conductive levels formedwithin the voids having first regions within the first segments andsecond regions within the second segments, the first regions beingvertically thicker than the second regions.
 14. A method of forming aNAND memory array, comprising: forming a vertical stack of alternatingfirst and second levels; the first levels comprising silicon dioxide,and the second levels comprising silicon; the first and second levelshaving exposed surfaces along an opening extending through the first andsecond levels; treating the exposed surfaces of the second levels withone or more of hydrogen, ammonia and fluorine; selectively formingcharge-trapping material along the treated surfaces of the second levelsrelative to the exposed surfaces of the first levels; formingcharge-tunneling material extending vertically along the first andsecond levels, and spaced from the second levels by the charge-trappingmaterial; forming channel material extending vertically along thecharge-tunneling material; removing the silicon of the second levels toleave voids; and forming metal-containing conductive levels within thevoids; the metal-containing conductive levels being wordline levels ofthe NAND memory array and having terminal ends corresponding to controlgate regions, the metal-containing conductive levels having firstregions and second regions, the first regions being vertically thickerthan the second regions.
 15. The method of claim 14 wherein thecharge-trapping material comprises one or more of silicon nitride,silicon oxynitride and ruthenium oxide.
 16. The method of claim 14comprising forming high-k dielectric material within the voids to linethe voids prior to forming the metal-containing conductive levels withinthe voids.
 17. The method of claim 16 comprising recessing the high-kdielectric material within the voids so that first segments of the voidsare not lined with the high-k dielectric material while second segmentsof the voids remain lined with the high-k dielectric material; andwherein the first regions of metal-containing conductive levels areformed within the first segments and the second regions ofmetal-containing conductive levels are formed within the secondsegments.